Electromagnetism

The sheet resistance that forgets the shape

To measure how well a thin film conducts, the obvious method is to cut it into a neat strip and pass a current along it. In 1958 Leo van der Pauw, an engineer at Philips, showed that the strip is unnecessary. Put four small contacts anywhere on the edge of a film of any shape, take two readings, and one equation returns the film's resistance per square — the shape and the spacing of the contacts drop out entirely. The proof is a single fact about logarithms and the maps that preserve angles, and it fails for exactly one kind of film: one with a hole in it.

Assumes: The resistance that is a length · One number for every point, and nothing at all is lost

The inside of a conductor found that a conductor in equilibrium has no field inside it, and how much charge a shape will hold and the charge that has to be somewhere else turned that into capacitance and image charges. How far a field gets into metal let the field in when it changes fast, and the resistance that is a length followed a steady current as it was forced to converge into a small contact, where it found a resistance that depends on the size of the spot and nothing else. That argument ended by naming what comes next: the four-terminal measurement, which exists because a two-terminal one measures the contacts as well as the sample.

The four-terminal measurement has a remarkable special case. For a thin film — a layer of metal or semiconductor thin compared with its width — the quantity that matters is the sheet resistance, the resistance of any square piece of it between opposite edges, which is the resistivity divided by the thickness and is the same for a square of any size. It can be measured on a sample of any shape at all, with contacts anywhere on its edge, and the answer does not depend on either. The reason is one of the neatest applications of the mathematics of potentials in all of physics, and its one failure is as instructive as its success.

Why four contacts rather than two

A resistance measured with two wires includes everything in the current’s path: the wires, the contacts, and the crowding of current into each contact, which the resistance that is a length found can easily exceed the resistance of the sample. Lord Kelvin’s remedy, from the 1860s, is to separate the jobs. Two contacts carry the current; two others, where no current flows, measure the voltage. A voltmeter that draws no current sees no drop in its own leads or contacts, so the reading is the potential difference inside the sample between the two voltage contacts, divided by the current.

For a long strip with the voltage contacts between the current contacts, the reading converts to a resistivity with the strip’s length, width and thickness. That needs a strip, cut accurately, with contacts at known places. Semiconductor wafers, thin films deposited on glass, flakes of new materials a few micrometres across: none of them comes as a neat strip, and cutting them into one changes them or destroys them.

The unit deserves a word, because it is what makes a film’s resistance a single number. A square of film carries current between two opposite edges with a resistance equal to its resistivity divided by its thickness, and that does not depend on how large the square is: doubling the side doubles the length the current travels and doubles the width it travels through, and the two cancel. A strip three squares long has three times the sheet resistance between its ends, whatever its width. Engineers therefore quote the resistance of films in ohms per square, and design a thin-film resistor by counting squares. The quantity every method is after is this one number, and in a strip it has to be disentangled from the geometry by measuring the length and width. Van der Pauw’s method never measures either.

Four contacts on any shape

Van der Pauw’s method puts all four contacts on the edge of the film, anywhere, in order round the perimeter: A, B, C, D. Pass a current from A to B and measure the voltage from D to C; call the ratio R1R_1. Pass it from B to C and measure from A to D; call that R2R_2. Then, for a film of uniform thickness with no holes and contacts small enough to be points,

e−πR1/Rs+e−πR2/Rs=1,e^{-\pi R_1/R_s} + e^{-\pi R_2/R_s} = 1,

where RsR_s is the sheet resistance. Given the two readings, there is exactly one RsR_s that satisfies the equation, and it can be found in a moment.

Three shapes of film, one sheet resistance. Three thin films of the same material, of sheet resistance one ohm per square, with four small contacts on each edge labelled A to D in order. For each, the two readings van der Pauw's method takes — the voltage between D and C per unit current from A to B, and between A and D per unit current from B to C — computed by solving for the current flow on a fine grid. For a square, contacts at the corners: 0.221 and 0.221 Ω, giving 1.000 Ω per square; a disc, contacts unevenly spaced: 0.089 and 0.450 Ω, giving 0.999 Ω per square; an irregular lamina: 0.209 and 0.232 Ω, giving 0.999 Ω per square. The readings change with the shape and with where the contacts are; the sheet resistance recovered from them by exp(−πR₁/Rₛ) + exp(−πR₂/Rₛ) = 1 does not.
Fig. 1 Three thin films of one ohm per square, with four small contacts A to D on each edge: a square with contacts at the corners, a disc with unevenly spaced contacts, and an irregular lamina. The two readings, computed by solving for the current on a fine grid, are 0.221 and 0.221 Ω, 0.089 and 0.450 Ω, and 0.209 and 0.232 Ω. The relation returns 1.000, 0.999 and 0.999 Ω per square.

The figure tests the claim without assuming it. Each film is laid out as a fine grid of identical resistors — a sheet of one ohm per square — and for each the current flow is solved directly, with a unit current fed in at one contact and taken out at another, and the voltage read between the other two. The square, with contacts at its corners, gives equal readings of 0.221 ohms. The disc, with its contacts bunched unevenly, gives 0.089 and 0.450. The irregular lamina gives 0.209 and 0.232. None of the readings means anything on its own, and all three pairs, put into van der Pauw’s relation, give the same sheet resistance to within the grid’s accuracy of a part in a thousand.

Where the current goes

It helps to see the flow inside one of the films.

The potential in an irregular film with current passing between two edge contacts. The irregular film of the previous figure with a current fed in at contact A and taken out at B, both on its edge: lines of equal potential, at thirteen equal steps between the two contacts, computed on the grid. The potential difference between the other two contacts, D and C, per unit current, is the first reading, 0.209 Ω. The lines crowd round the two current contacts and spread through the rest of the film; every one of them meets the edge at right angles, because no current can leave through it. The edge is where the theorem lives: all four contacts sit on it, and a conformal map that turns the film into a half-plane carries the edge onto a straight line without changing any potential there.
Fig. 2 The irregular film with a current fed in at contact A and taken out at B: lines of equal potential at thirteen equal steps between the two contacts. The potential difference between D and C per unit current is the first reading, 0.209 Ω. Every line meets the edge at right angles, because no current leaves through it.

The figure draws lines of equal potential in the irregular film with current passing from A to B. Near each current contact the lines crowd into small semicircles, where the current converges, and the potential there changes steeply. Through the rest of the film they spread out, and the far part of the film, where C and D sit, lies in a gentle slope of potential whose difference between the two contacts is the reading. Every line meets the edge at right angles: no current crosses the edge, so the potential cannot change in the direction perpendicular to it.

That condition at the edge, together with the fact that the potential inside a uniform sheet with no current sources obeys Laplace’s equation — the equation one number for every point found governing any potential in empty space — is all the physics there is. The rest is geometry.

The proof in a half-plane

The simplest shape to compute is the least practical one: a sheet filling half of an infinite plane, with its four contacts on the straight edge.

The potential along the edge of a half-plane. A sheet filling half a plane, of resistance one ohm per square, with contacts at −2.0, −0.5, 1.0, 2.5 along its straight edge: the potential along the edge when a unit current enters at A and leaves at B. It is (1/π) ln(|x − b|/|x − a|), a pair of logarithms. The first reading is the difference between D and C, 0.0916 Ω; with the current passed from B to C instead, the second is 0.4413 Ω. Each is the logarithm of a cross-ratio of the four positions, divided by π, and exp(−πR₁) + exp(−πR₂) = 1 exactly, because the two cross-ratios add to one. Cross-ratios are unchanged by the conformal maps that turn a half-plane into any other simply connected shape, which is the whole proof that the relation between the two readings cannot depend on the shape.
Fig. 3 A sheet filling half a plane, one ohm per square, with contacts at −2.0, −0.5, 1.0 and 2.5 along its edge: the potential along the edge with unit current in at A and out at B, (1/π)ln⁡(∣x−b∣/∣x−a∣)(1/\pi)\ln(|x - b|/|x - a|). The first reading is 0.0916 Ω; with the current from B to C, the second is 0.4413 Ω. Each is a logarithm of a cross-ratio of the four positions, and e−πR1+e−πR2=1e^{-\pi R_1} + e^{-\pi R_2} = 1 exactly.

A current II fed into a half-plane at a point on its edge spreads out in semicircles, and the potential falls as the logarithm of distance, because the current crosses semicircles whose length grows in proportion to their radius. With a source at A and a sink at B, the potential along the edge is a difference of two logarithms, which the figure draws: it runs to plus infinity at the source and minus infinity at the sink and settles smoothly elsewhere. The reading R1R_1 is the potential difference between D and C, and it comes out as 1/π1/\pi times the logarithm of a combination of the four positions called their cross-ratio. The second reading is 1/π1/\pi times the logarithm of a second cross-ratio. For any four points in order on a line, the two cross-ratios in question add to exactly one, and that identity, with the logarithms undone, is van der Pauw’s relation.

The step to any other shape uses a theorem of Riemann’s: any simply connected region of the plane can be mapped onto a half-plane by a transformation that preserves angles, a conformal map. Such a map carries solutions of Laplace’s equation into solutions, point sources into point sources of the same strength, and edges where no current crosses into edges where no current crosses. It moves the four contacts to four new points on the straight edge, and the readings of the original film are the readings of the half-plane with the contacts at those points. Whatever the four new points are, their cross-ratios add to one. The shape has disappeared into the positions of the contacts, and the relation does not care about the positions.

The correction factor

In practice the relation is written in a form that shows how far from ideal a particular placement of contacts is.

The correction for two unequal readings. Van der Pauw's correction factor f against the ratio of the two readings R₁/R₂, on a logarithmic axis of the ratio. The sheet resistance is (π/ln 2) times the mean of the two readings times f. For equal readings f = 1 and the sheet resistance is simply 4.532 times the reading. For a ratio of 10 f is 0.699, for 100 it is 0.404, and for 1,000 0.264. A large ratio means the contacts are bunched unevenly round the edge, and the correction then does most of the work; laboratories aim for a ratio near one, where the answer is least sensitive to an error in either reading.
Fig. 4 Van der Pauw’s correction factor ff against the ratio of the two readings R1/R2R_1/R_2, on a logarithmic axis of the ratio: the sheet resistance is (π/ln⁡2)(\pi/\ln 2) times the mean reading times ff. For equal readings f=1f = 1 and the sheet resistance is 4.532 times the reading; for ratios of 10, 100 and 1,000, ff is 0.699, 0.404 and 0.264.

When the two readings are equal, as they are for a square with contacts at its corners or a disc with contacts evenly spaced, the relation solves at once: the sheet resistance is π/ln⁡2\pi/\ln 2, 4.532, times the reading. When they differ, the sheet resistance is 4.532 times their mean, multiplied by a factor ff that depends only on their ratio and falls from one as the ratio grows. A ratio of ten needs f=0.70f = 0.70. A large ratio means the contacts are unevenly placed, so that one pair sits close together and its reading is small; the correction then carries much of the answer, and a small error in the smaller reading becomes a large error in the result. Laboratories therefore place contacts as symmetrically as the sample allows, check that the ratio is near one, and then repeat each reading with the current reversed and the roles of the contacts exchanged, averaging out thermoelectric voltages at the contacts and any small asymmetry.

The same four contacts, with a magnetic field applied perpendicular to the film and the current passed between opposite contacts rather than adjacent ones, measure the Hall voltage, which gives the density of charge carriers and their sign. Van der Pauw’s 1958 paper treated both. The pair of measurements — sheet resistance and Hall coefficient on an arbitrary flake — is the standard characterisation of a new semiconductor, and it is what the barrier the metal cannot choose would have needed to know about the doping of its silicon.

What a hole does

The argument used one fact about the film beyond its uniformity: that it could be mapped onto a half-plane. That needs a film with no holes in it.

A hole the method cannot see and is wrong about. A square film of one ohm per square with contacts at its corners and a circular hole cut out of its centre: the sheet resistance van der Pauw's relation returns, against the hole's diameter as a fraction of the square's side, computed on the grid: hole 0.0: 1.000 Ω per square; hole 0.1: 1.056 Ω per square; hole 0.2: 1.215 Ω per square; hole 0.3: 1.449 Ω per square; hole 0.4: 1.800 Ω per square. The theorem needs a film with no holes, because a hole makes the film not simply connected and no conformal map carries it onto a half-plane. The contacts on the outer edge cannot tell there is a hole; the readings rise as if the material were more resistive, and the answer is wrong by the amount shown.
Fig. 5 A square film of one ohm per square with contacts at its corners and a circular hole at its centre: the sheet resistance van der Pauw’s relation returns, against the hole’s diameter as a fraction of the side. No hole, 1.000; a hole of 0.1, 1.056; of 0.2, 1.215; of 0.3, 1.449; of 0.4, 1.800 Ω per square.

The figure cuts a circular hole out of the middle of the square and repeats the calculation. The current, which had spread through the whole film, now has to go round the hole, and both readings rise. The relation, which cannot know about the hole, interprets the higher readings as a more resistive material: a hole a tenth of the side across gives a sheet resistance six per cent too high, and one four-tenths across gives eighty per cent too high. The error has no warning sign. The readings still satisfy the relation for some value of RsR_s, and nothing in them says the value is wrong.

A region with a hole is not simply connected: a loop round the hole cannot be shrunk to a point without leaving the film, and no conformal map can carry it onto a half-plane, which has no holes. A potential that does not come back to itself met the same topological fact in magnetostatics, where a hole in the region is what lets a scalar potential be multivalued. Here it is what breaks a measurement. In practice holes are cracks, voids, or regions where a film failed to deposit, and a sample that gives inconsistent results when its contacts are rotated round the edge is the usual first sign of one.

The same relation for anything that obeys Laplace’s equation

Nothing in the proof used the fact that the thing flowing was electric charge. It used a quantity that is conserved as it flows, a flux proportional to the gradient of a potential, and an edge across which nothing flows. Heat in a thin plate obeys exactly those rules, with temperature for potential and thermal conductivity for conductivity, and the relation holds with thermal resistances in place of electrical ones: heat a plate at one edge point, cool it at another, read the temperature difference between two further edge points, and the plate’s sheet thermal conductance follows from two such readings whatever its shape. Methods based on this are used for thin films where the thermal conductivity is the property of interest, with laser spots or micro-heaters as the contacts.

The same mathematics also has a probabilistic reading. The potential is where the wanderers stop found that the solution of Laplace’s equation at a point is an average over where random walkers starting there first reach the boundary. In a film with current contacts, the potential difference between two edge points measures how differently a walker released from each of them is drawn towards the source rather than the sink, and the edge where no current flows is a wall off which walkers bounce. The conformal invariance that proves van der Pauw’s theorem is, in that language, the statement that the paths of a two-dimensional random walk look the same, statistically, after any angle-preserving distortion of the plane — a property of planar Brownian motion established by Paul Lévy and now central to the modern theory of random curves.

And the potential inside the film obeys the maximum principle that nothing can be held still by a static field derived for electrostatics: with no sources inside, the potential has no peak or pit in the interior, and its extremes lie at the current contacts. That is why every line of equal potential in the figure of the irregular film runs from edge to edge, and why none closes on itself in the middle.

Contacts that are not points

The other assumption is that the contacts are points on the edge. Real contacts have a size, and if they are placed a little inside the edge rather than on it, current can flow round them. Van der Pauw estimated the errors: for a disc with contacts of length ℓ\ell on its circumference, the sheet resistance comes out low by about ℓ2/(16D2ln⁡2)\ell^2/(16 D^2 \ln 2) of itself, where DD is the diameter — a contact a tenth of the diameter long gives an error under a tenth of a per cent. Contacts set back from the edge are worse, because current passes behind them. For this reason test structures on chips are often made in the shape of a cloverleaf or a Greek cross: the contacts sit at the ends of four arms, far from the central region the current actually samples, and their size stops mattering.

The grid calculations in the figures have a related limitation of their own. A contact on a grid is a single cell, and the current converging into it sees the grid’s spacing rather than a true point, which is why the recovered sheet resistances are 0.999 rather than exactly one. The error shrinks as the grid is refined, and it is the numerical counterpart of a finite contact.

Where the model stops

The method assumes a film of uniform thickness and uniform resistivity. A film whose thickness varies across it returns an average weighted by where the current flows, which depends on the placement of the contacts, and rotating the contacts then changes the answer — which is, again, a useful diagnostic. An anisotropic film, one that conducts better in one direction than another, can be handled by stretching the coordinates to make it isotropic, and a related method of Montgomery’s measures both principal resistivities. And the method measures a sheet resistance, not a resistivity: the thickness has to be known separately to convert one into the other, and for films a few atoms thick the idea of a resistivity may not apply at all.

Still open: what the flake is doing inside

Van der Pauw’s method has become the standard way to characterise materials that exist only as small, irregular flakes: graphene, the transition-metal dichalcogenides, twisted bilayers whose electrical properties depend on the angle between their layers. Those samples are often not uniform, with folds, bubbles, and domains of different twist angle, and the readings from four edge contacts average over whatever is inside. How much of the variation reported between laboratories for the same nominal material reflects the materials and how much reflects the averaging is often unclear, and scanning methods that map the local conductivity directly, rather than inferring it from the edge, are increasingly used to check. The method is exact for the film it assumes; whether the film under test is that film is a question it cannot answer.

The habit worth carrying away is to ask what a measurement is invariant under. The potentials of a flat conductor are unchanged in character by any map that preserves angles, and that map can carry any film without holes onto a half-plane, where the two readings are logarithms of cross-ratios that always add to one — so the shape of the film and the placement of the contacts both drop out, and a single hole puts them back. Four contacts on the edge of a flake measure what the flake is made of, and nothing about how it was cut.

Part 7 of 7

This essay is one argument about Conductors. The others:

The objects named here

The third axis, after the field and the reading path: the things themselves, and every essay that touches each one.

Conformal mapContact resistanceFour terminal measurementLaplace equationResistivitySheet resistanceVan der pauw method