Thermodynamics

The glow that carries a voltage

Thermal radiation has no chemical potential, because walls make and destroy photons freely. A light-emitting diode is a body that glows at room temperature with a voltage written into its light — Planck's law with the voltage as the photons' chemical potential — which is why its light can be as bright as a surface thousands of kelvin hot, why at low voltage it can put out more light than the power it draws and cool itself doing so, and why a reverse voltage makes a surface look colder than it is.

Assumes: The reaction that cannot go all the way · The gas that nobody counted

The gas that nobody counted is a box of thermal radiation, and its defining property is that the number of photons in it is not fixed. The walls absorb photons and emit new ones without restriction, so the number settles wherever the free energy is least. The same argument that keeps a reaction from going all the way then says something about the photons’ chemical potential: a quantity that nothing holds fixed must have a chemical potential of zero at equilibrium. That is why Planck’s law, 1/(ehν/kT1)1/(e^{h\nu/kT} - 1) photons per mode, has no chemical potential in it.

A light-emitting diode is a body in which something does push on the number of photons. Under a forward voltage, electrons and holes are driven into the same region of a crystal in numbers far above those the temperature alone would sustain, and they recombine to make light. The light that results is in equilibrium not with the lattice alone but with those excess electrons and holes, and its occupation of each mode is

1e(hνqV)/kT1,\frac{1}{e^{(h\nu - qV)/kT} - 1},

with TT the temperature of the crystal and VV the voltage across the junction. It is Planck’s law with the voltage appearing as the photons’ chemical potential. Peter Würfel wrote it down in this form in 1982, and every property of an LED that looks like a paradox follows from taking it literally.

A voltage multiplies the glow without changing its slope

An ideal semiconductor absorbs every photon above its band gap and none below, and a body that absorbs must emit. With no voltage across it, it glows at its own temperature, and above the gap that glow is the tail of a blackbody spectrum — for a gallium arsenide gap of 1.42 electronvolts at 300 K, a few thousand photons per square metre per second per electronvolt. Nothing a camera could detect.

A voltage multiplies thermal emission without changing its slope. The light an ideal 1.42 eV semiconductor at 300 K emits per unit photon energy, on a logarithmic scale, with 0 V, 1 V, 1.2 V, 1.3 V across it. Nothing is emitted below the gap. At zero volts the emission is the device's own thermal glow, 2783 photons per square metre per second per eV at its peak. Each bias raises every point of the spectrum by the same factor, exp(qV/kT) — 16.8 powers of ten at 1 V, 20.2 powers of ten at 1.2 V, 21.8 powers of ten at 1.3 V — checked at one photon energy against the integrand. The curves are parallel: above the gap each falls by a factor e for every 25.9 meV, the lattice's kT, whatever the bias. The voltage enters the light as a chemical potential, not as a temperature.
Fig. 1 The light an ideal 1.42 eV semiconductor at 300 K emits per unit photon energy, on a logarithmic scale, with no voltage and with 1.0, 1.2 and 1.3 V across it. Every bias raises the whole spectrum by the same factor, and every curve falls with the same slope above the gap.

Put a voltage across it and every point of that spectrum rises by the same factor, eqV/kTe^{qV/kT}. At one volt that is 16.8 powers of ten; at 1.3 volts, 21.8. The thermal glow at the bottom of the figure and the working LED at the top are the same curve, shifted.

What the voltage does not change is the slope. Above the gap, every spectrum in the figure falls by a factor of ee for each 25.9 millielectronvolts of photon energy, which is kTkT for the lattice at room temperature. The light of a working LED has the spectral shape of a room-temperature body and the brightness of something vastly hotter. That combination is impossible for any single temperature, and it is exactly what a chemical potential produces: μ\mu shifts the occupation of every mode by the same factor, while TT sets how fast the occupation falls from one mode to the next.

As bright as a surface thousands of kelvin hot

The occupation of a mode is the most direct measure of how bright light is at that frequency — it is the quantity no lens can increase — and it gives a way to say how hot an LED’s light looks.

The light of a diode at room temperature is as bright as a surface thousands of kelvin hot. How many photons occupy each mode of the light, on a logarithmic scale, against photon energy. The lowest curve is the thermal glow of a 1.42 eV semiconductor at 300 K with no voltage across it. The solid curve above it is the same device with 1.3 V across it, emitting only above its gap. The dashed curve is a blackbody at 2571 K, the temperature whose light has the same occupation as the diode's at 1.472 eV, just above the gap. They cross there and nowhere else: the diode's occupation falls a factor e every 25.9 meV, as its lattice's temperature requires, and the blackbody's every 222 meV. No single temperature describes the diode's light. At each photon energy it has a brightness temperature, and that temperature is 300 K multiplied by ε/(ε − qV).
Fig. 2 Photons per mode against photon energy, on a logarithmic scale: the thermal glow of a 1.42 eV semiconductor at 300 K, the same device with 1.3 V across it, and the blackbody whose occupation matches the diode’s just above its gap. They cross at one photon energy and nowhere else.

With 1.3 volts across it, the diode’s light just above the gap has the occupation of a blackbody at 2,571 K — about the temperature of a domestic lamp filament. At every other photon energy the match fails, in the direction the slopes predict: the diode’s occupation falls with the lattice’s kTkT of 25.9 millielectronvolts and the blackbody’s with 222. A thermometer at that single photon energy would read 2,571 K; one at a slightly higher energy, less; and the general answer is the brightness temperature Thν/(hνqV)T\,h\nu/(h\nu - qV), which is different at every frequency.

That formula also shows where the description ends. As the voltage approaches the photon energy, the brightness temperature grows without limit. Past it, the occupation formula turns negative, which is not a meaningless result but the statement that stimulated emission now outruns absorption — the condition for gain, and for a laser. The brightness temperature has passed through infinity to negative values, which is the same passage a temperature makes when a population is pushed into its upper states. A laser diode is an LED driven past the point where its light’s chemical potential exceeds its photons’ energy.

Where the voltage comes from

That the voltage should appear in the light as a chemical potential is not a coincidence of notation. It is an equilibrium condition, and it is the same condition that fixes where a chemical reaction stops.

In a biased semiconductor the electrons in the conduction band come to equilibrium among themselves in picoseconds, far faster than they recombine, and the same is true of the holes in the valence band. Each population therefore has a temperature, the lattice’s, and a chemical potential of its own — its quasi-Fermi level. The two are separated by qVqV: that separation is what the voltage across a junction is, measured from inside.

Recombination is then a reaction, electron plus hole goes to photon, and a reaction at equilibrium has its chemical potentials balanced: μe+μh=μγ\mu_e + \mu_h = \mu_\gamma. With the electrons’ and holes’ potentials separated by qVqV, the photons’ chemical potential is qVqV. When no voltage is applied the quasi-Fermi levels merge, μe+μh=0\mu_e + \mu_h = 0, and the light returns to ordinary thermal radiation with no chemical potential, as it must.

A solar cell runs the same relation backwards. Sunlight separates the quasi-Fermi levels, the cell’s own emission rises until its chemical potential matches that separation, and the voltage across an open-circuited cell is the chemical potential of the light it is emitting back. That is why the work a diluted beam of sunlight can do is limited by the cell’s own glow, and why concentrating the light raises the voltage by the logarithm of the concentration.

Concentrating light past the limit a lens obeys

The chemical potential of light also explains a device that seems to break a theorem. No arrangement of lenses and mirrors can make light brighter than its source: the occupation per mode is conserved along every ray, so the concentration of sunlight is bounded by how small the Sun looks. Yet a flat sheet of plastic doped with a fluorescent dye, lit from above by diffuse daylight, delivers light out of its edges at a brightness no passive optic could produce from the same light.

The resolution is that the dye is not passive. Each molecule absorbs a photon and, after its excited state has shed a little energy into vibrations, emits another at a slightly lower frequency. The emitted light is in equilibrium with the dye’s excited population, not with the incoming sunlight, and it carries a chemical potential set by how strongly that population is pumped. A chemical potential raises the occupation of every mode by the same factor, and a small loss of photon energy — a few kTkT per photon, given up as heat — buys a large increase in the number of modes that can be crowded, because each kTkT of downshift pays for a factor of ee in the ratio.

Eli Yablonovitch set out the thermodynamic limit of such luminescent concentrators in 1980, and it has exactly this form: the concentration can exceed the passive limit by a factor exponential in the frequency shift divided by kTkT. The second law is satisfied the same way it is in the diode, with the entropy of the lost energy paying for the order of the concentrated light. What looked like a violation of a brightness theorem is the brightness theorem applied to light whose chemical potential was never zero.

More light out than power in

The electrical power a diode draws is its current times its voltage. The light power it emits is the number of photons times the mean photon energy. If every electron becomes an escaping photon, the ratio of the two is simply the mean photon energy divided by qVqV — and the mean photon energy is fixed by the gap and the temperature, not by the voltage.

At low voltage a light-emitting diode puts out more light than the power it draws. The ratio of light power out to electrical power in, on a logarithmic scale, against the voltage across a 0.58 eV diode held at 408 K, for devices in which 100 per cent, 90 per cent, 50 per cent of the current becomes light that escapes, drawn up to within 4kT of the gap. Every photon carries the gap energy plus a little, about 0.619 eV here, while each electron is pushed across only qV. So the ideal device puts out more light than electrical power at every voltage drawn — 4.0 times as much at 0.15 V, where the light is 7.1 watts per square metre — and the difference is drawn from the heat of the crystal. One converting 90 per cent stays above one across the range; one converting 50 per cent falls through an efficiency of one at 0.31 V. Every gain is largest where the light is faintest.
Fig. 3 Light power out divided by electrical power in, on a logarithmic scale, against the voltage across a 0.58 eV diode held at 408 K, for devices in which all, 90 per cent and half of the current becomes escaping light. Above the dashed line the device emits more light than the electrical power it draws.

For a 0.58 electronvolt gap at 408 K, each photon carries 0.619 electronvolts on average. At a voltage of 0.15 volts each electron is given 0.15 electronvolts and becomes a photon of 0.619, and the diode emits 4.1 times the electrical power it consumes. The ratio exceeds one at every voltage below the photon energy. It is largest where the light is faintest, because the output rises exponentially with voltage while the gain falls only as its reciprocal.

The measurement exists. In 2012 a mid-infrared diode with a gap of about this size, heated to 135 °C to raise the thermal contribution, was reported to emit 69 picowatts of light while consuming about 30 picowatts of electrical power — an efficiency of 230 per cent. The light is faint by any practical standard. The principle is not in doubt, and it violates nothing, because the energy has to come from somewhere and the figure below shows where.

Real diodes lose current that does not become light: electrons and holes that recombine without emitting, and photons that are emitted but trapped inside the crystal by total internal reflection at its surface. A device that turns half its current into escaping light crosses an efficiency of one at 0.31 volts, and one that manages 90 per cent stays above one across the whole range drawn. Commercial LEDs lose far more than that at low currents, which is why the effect had to be sought with care.

A heat pump whose working fluid is light

If a photon leaves with more energy than its electron was given, the difference is taken from the crystal. The diode is cooling itself, and the ledger per photon says by how much.

Where the energy of each photon comes from. For a 0.58 eV diode at 408 K in which 70 per cent of the electrons become escaping photons, the energy budget of one photon at each of 4 voltages. The upper bar is the electrical energy spent per photon, qV divided by that fraction. The lower bar is the mean energy of the photon it becomes, 0.619 eV at every voltage, because the spectrum's shape is set by the lattice. At 0.15 V the crystal supplies 405 meV of heat per photon; at 0.3 V the crystal supplies 191 meV of heat per photon; at 0.42 V the crystal supplies 19 meV of heat per photon; at 0.46 V the crystal absorbs 38 meV as heat per photon. Above 0.434 V the device heats as every ordinary light source does; below it, it is a heat pump whose working fluid is light.
Fig. 4 The energy budget of one photon at four voltages, for a 0.58 eV diode at 408 K that turns 70 per cent of its current into escaping light: the electrical energy spent per photon, the energy the photon carries, and the heat taken from the crystal or given to it to make up the difference.

The photon’s energy is the same at every voltage — 0.619 electronvolts — because the spectrum’s shape belongs to the lattice. What changes is how much electrical energy is spent per photon, which is qVqV divided by the fraction of the current that becomes light. At 0.15 volts the crystal supplies 405 millielectronvolts of heat per photon. At 0.42 volts it supplies 19. At 0.46 volts the electrical energy has overtaken the photon’s, and the crystal absorbs 38 millielectronvolts per photon as heat, which is the ordinary behaviour of every lamp.

Below the crossover the diode is a heat pump. It draws heat from its lattice and dumps it into the room as light, and the second law is satisfied because the light carries entropy away with it. A photon emitted with chemical potential qVqV from a body at temperature TT takes away an entropy of at least (hνqV)/T(h\nu - qV)/T — exactly the entropy of the heat it drew from the lattice — so the total never falls, and the voltage marks how much of the photon’s energy arrived as ordered electrical work rather than as heat. The same accounting governs a refrigerator driven by heat rather than work, and it governs laser cooling of solids by anti-Stokes fluorescence, in which a crystal doped with suitable ions absorbs light just below a transition and re-emits it at a higher mean energy. That route has cooled crystals to below a hundred kelvin. The diode’s version has not yet produced net cooling of an emitting device at a useful power.

A voltage that makes a surface look colder

Nothing in the generalised Planck law requires the voltage to be positive. Reverse the bias, and the quasi-Fermi levels separate the other way: electrons and holes are drawn out of the junction, fewer than the temperature alone would provide, and the light’s chemical potential is negative.

A reverse voltage makes a surface look colder than it is. A 0.25 eV semiconductor — a gap in the mid-infrared, near 5 micrometres — held at 300 K. Across: the voltage across it. Up: the temperature a thermal camera working at 0.276 eV, just above the gap, would read for it, which is the temperature of the blackbody with the same occupation there. At −0.3 V it reads 144 K; at −0.1 V it reads 220 K; at 0 V it reads 300 K; at 0.15 V it reads 658 K. Forward bias makes the surface look hotter than it is, as an LED does; reverse bias makes it look colder, because the light's chemical potential is negative and the device emits less than its own thermal glow. The lattice stays at 300 K throughout.
Fig. 5 The temperature a thermal camera working just above the gap reads for a 0.25 eV semiconductor held at 300 K, against the voltage across it. Forward bias makes the surface look hotter; reverse bias, shaded, makes it look colder. The lattice stays at 300 K throughout.

For a gap of 0.25 electronvolts, in the mid-infrared near five micrometres where thermal cameras work, the effect is large at ordinary voltages. With 0.1 volts of reverse bias the device reads 220 K to a camera at the band edge; at 0.3 volts, 144 K. Its lattice stays at room temperature throughout. It is emitting less than its own thermal glow — negative luminescence — and a camera, which measures brightness and infers temperature, reports a cold object.

This is the most direct demonstration that a glow says nothing about the surface’s temperature unless the light’s chemical potential is known to be zero. The effect has been developed for switchable cold references in infrared instruments, because a surface that can be made to look forty kelvin colder with a voltage, and back again in microseconds, is easier to build than a surface that is forty kelvin colder. In 2019 the same physics was used to cool something else: a reverse-biased photodiode held tens of nanometres from a small calorimeter, close enough for light to tunnel across the gap, drew heat out of the calorimeter by radiating less at it than it received.

What the ideal diode assumes

Every photon above the gap is absorbed and none below. Real absorption rises gradually through the gap, with a tail of weak absorption below it, and the emission follows the absorption exactly — so the real spectrum is the ideal one multiplied by the absorptivity, and its low-energy edge is soft rather than a cliff. The multiplication by eqV/kTe^{qV/kT} survives unchanged.

Electrons and holes are in equilibrium within their bands. That needs their scattering to be much faster than their recombination, which is true by orders of magnitude in ordinary semiconductors at ordinary injection, and fails in devices driven so hard that carriers are hotter than the lattice.

The voltage in the formula is the separation of the quasi-Fermi levels in the emitting region. The voltage at the terminals is larger, by the drop across the contacts and the bulk material, and every loss of that kind is electrical energy that becomes heat without becoming light. At the low currents where the gain exceeds one those drops are small; at the high currents where LEDs are used they dominate.

The chemical potential stays below the photon energy. The figures stop within a few kTkT of the gap, because beyond it the device amplifies light and the thermal description with a smooth occupation per mode no longer applies.

The light an emitter keeps inside itself

Every figure describes light per unit area of an idealised emitting surface, with all the photons that are made escaping. A real LED is a small, bright region inside a slab of high-index material, and most of the light it makes is trapped, reabsorbed, re-emitted and eventually lost as heat. How much of the generalised Planck law’s light reaches the outside is a matter of geometry and not of thermodynamics, and it decides most of the efficiency of a commercial device.

Nor do the figures show the power involved. The efficiency plot runs over voltages at which the light emitted ranges over many powers of ten, and the region where the efficiency is largest is the region where there is almost no light at all. A diode cooling itself at 230 per cent efficiency does so at picowatts, and no drawing of a ratio can make that visible.

Still open: whether light can cool a chip

Electroluminescent cooling would be a solid-state refrigerator with no moving parts and no fluid, pumping heat out of a device as infrared light that leaves the system entirely. The physics above shows it is allowed; the question is whether it can be made to work at a useful power. The difficulty is a race between two exponentials. The light, and so the cooling, grows as eqV/kTe^{qV/kT}; every non-radiative loss and every photon trapped inside the crystal takes a fraction of the current and returns it as heat. Net cooling requires the fraction of current that becomes escaping light to be very close to one — well above 99 per cent in most analyses of power densities that would matter — and to stay there at currents high enough to pump appreciable heat.

Several routes are pursued: coupling the emitter to a photodiode across a gap narrower than a wavelength, so that light that would be trapped tunnels out through the evanescent field and is recycled as electrical power; operating at elevated temperature, where the thermal contribution is larger; and materials with extraordinarily low non-radiative recombination. Measured net cooling of a macroscopic device by its own electroluminescence has not been reported at a level that settles whether the approach can become practical.

The habit worth carrying away is to ask of any light what fixes the number of photons in it. Light whose photon number is free has no chemical potential and is described by a temperature; light whose photon number is pushed has one, and needs both. A thermal glow, a laser, a solar cell’s emission and the faint dark of a reverse-biased diode are the same law with different values of that second number.

Part 2 of 2

This essay is one argument about Chemical potential. The others:

The objects named here

The third axis, after the field and the reading path: the things themselves, and every essay that touches each one.

Band gapBlackbodyBrightness temperatureChemical potentialDetailed balanceHeat pumpLight emitting diodePhoton